Pastuović, Željko; Capan, Ivana; ...; Vittone, Ettore.
Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 332 (2014) ; 298-302.
Pastuović, Željko; Capan, Ivana; David D. Cohen; Jacopo, Forneris; Naoya, Iwamoto; Takeshi, Ohshima; Rainer, Siegele; Norihiro, Hoshino; Tsuchida, Hidekazu.
Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam. // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 348 (2015) ; 233-239.
Capan, Ivana; Pastuović, Željko; Siegele, Rainer; Jaćimović, Radojko.
Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range. // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 372 (2016) ; 156-160.